P 沟道,PowerTrench® MOSFET,-40V,-14A,44mΩ

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概览

此 P 沟道 MOSFET 是使用 PowerTrench® 专属技术生产的,可提供低 rDS(on) 和优化的 BVdss 能力,为应用带来卓越性能优势。

  • This product is general usage and suitable for many different applications.

  • 最大rDS(on) = 44mΩ(VGS = -10V且ID = -6.7A时)
  • 最大rDS(on) = 64mΩ(VGS = 4.5V且ID = 5.5A时)
  • 高性能沟道技术可实现极低的rDS(on)
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

Y

P-Channel

PowerTrench® T1

DPAK

Small Signal

Logic

0

Single

0

-40

44

±20

-3

-14

42

-

64

-

21

1165

4

30

165

90

$0.2689

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