功率 MOSFET,N 沟道,UniFETTM,200V,4.5A,800mΩ,DPAK

Last Shipments

概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 技术的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻,提供更好的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电源转换器应用,如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • This product is general usage and suitable for many different applications.

  • RDS(on) = 600mΩ (典型值)(VGS = 10V, ID = 2.3A 时)
  • 低栅极电荷(典型值 4.7nC)
  • 低 Crss(典型值 6.3pF)
  • 100% 经过雪崩击穿测试
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDD6N20TM

Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Small Signal

Standard

0

Single

0

200

800

±30

5

4.5

40

-

-

-

4.7

170

2.2

400

45

6.3

Price N/A

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