Small Signal MOSFETs | FDD8870

N 沟道，PowerTrench® MOSFET，30V，160A，3.9mΩ

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON) 和快速开关。

  • This product is general usage and suitable for many different applications.

  • RDS(ON) = 3.9 mΩ, VGS = 10V, ID = 35V
  • RDS(ON) = 4.4 mΩ, VGS = 4.5V, ID = 35V
  • 高性能沟道技术可实现极低的RDS(ON)
  • 低栅极电荷
  • 高功率和高电流处理能力

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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FDD8870

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Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

369AS

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

TO-252-3

Small Signal

Logic

0

Single

0

30

3.9

20

2.5

160

160

-

4.4

29

48

5160

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDD8870

Equivalent to wafer fab process: T5

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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