N 沟道,逻辑电平,PowerTrench® MOSFET,40 V,100 A,1.7 mΩ

Last Shipments

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N 沟道,逻辑电平,PowerTrench® MOSFET,40 V,100 A,1.7 mΩ

  • This product is general usage and suitable for many different applications.
  • 典型 RDS(on) = 1.4 mΩ(VGS = 10 V、ID = 80 A
  • 典型 Qg(tot) = 96 nC(VGS = 10 V、ID = 80 A
  • UIS 能力
  • 符合 RoHS 标准
  • 符合 AEC Q101 标准

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDD9407L-F085

Last Shipments

CAD Model

Pb

A

H

P

DPAK-3 / TO-252-3

1

260

REEL

2500

No

N-Channel

PowerTrench® T1

TO-252-3

Small Signal

Logic

0

Single

0

40

1.7

±20

3

100

227

-

2.4

-

50

6700

15

106

1640

68

Price N/A

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