集成式 P 沟道,Power Trench® MOSFET 和肖特基二极管,-60V,-3.0 A,110mΩ

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FDFS2P106A 在 SO-8 封装内将 PowerTrench MOSFET 技术的卓越性能与极低正电压降的肖特基势垒整流器相结合。此器件特别适合用作 DC-DC 转换器的单封装方案。它具有快速开关、低门极电荷 MOSFET,且导通电阻极低。独立联接的肖特基二极管使其可用于各种 DC/DC 转换器拓扑结构。

  • This product is general usage and suitable for many different applications.

  • • -3.0A, -60 V
  • RDS(on) = 110 mΩ(VGS = -10 V时)
  • RDS(on) = 140 mΩ(VGS = -4.5 V时)
    • VF < 0.45 V @ 1 A (TJ = 125°C)
  • VF < 0.53 V @ 1 A
  • VF < 0.45 V @ 1 A (TJ = 125°C)
  • VF < 0.62 V @ 2 A
    • 肖特基二极管和MOSFET已整合在单电源表面贴装SO-8封装中
    • 电气独立的肖特基二极管和MOSFET引脚,可实现设计的灵活性
  • Schottky and MOSFET incorporated into singlepower surface mount SO-8 package
  • Electrically independent Schottky and MOSFETpinout for design flexibility

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

with Schottky Diode

0

-60

110

±20

-3

-3

2

-

140

-

15

714

3

-

84

33

Price N/A

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