集成式 P 沟道,Power Trench® MOSFET 和肖特基二极管,-60V,-3.0 A,110mΩ
Last Shipments
FDFS2P106A 在 SO-8 封装内将 PowerTrench MOSFET 技术的卓越性能与极低正电压降的肖特基势垒整流器相结合。此器件特别适合用作 DC-DC 转换器的单封装方案。它具有快速开关、低门极电荷 MOSFET,且导通电阻极低。独立联接的肖特基二极管使其可用于各种 DC/DC 转换器拓扑结构。
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Package Type
Case Outline
MSL Type
MSL Temp (°C)
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Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Last Shipments
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
P-Channel
PowerTrench® T1
SOIC-8
Small Signal
Logic
0
with Schottky Diode
0
-60
110
±20
-3
-3
2
-
140
-
15
714
3
-
84
33
Price N/A
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可靠性数据
Die Related Summary Data
Device: FDFS2P106A
Equivalent to wafer fab process: TB,TR
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TB,TR
0
199667497
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Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)