Small Signal MOSFETs | FDFS2P753Z

-30V Integrated P-Channel PowerTrench® MOSFET and Schottky Diode

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概览

FDFS2P753Z将飞兆PowerTrench MOSFET技术所具有的卓越性能与正向压降非常低的肖特基势垒整流器融合在SO-8封装中。
此器件专门设计为DC至DC转换器的单封装解决方案。 它具有快速开关、低栅极电荷的MOSFET以及极低的通态电阻。 独立连接的肖特基二极管允许其在大量DC/DC转换器拓扑下使用。

  • This product is general usage and suitable for many different applications.

  • Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A
  • Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A
  • VF < 500mV @ 1A
  • VF < 580mV @ 2A
  • Schottky and MOSFET incorporated into single power surface mount S0-8 package
  • Electrically independent Schottky and MOSFET pinout for design flexibility
  • RoHS Compliant

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDFS2P753Z

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

with Schottky Diode

0

-30

115

25

-3

-3

1.6

NA

-

-

3.3

NA

-

-

-

-

Price N/A

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