Small Signal MOSFETs | FDFS6N548

集成式 N 沟道，Power Trench® MOSFET 和肖特基二极管，30V，7A，23mΩ

Obsolete

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概览

FDFS6N548 在 SO-8 封装内将 PowerTrench MOSFET 技术的卓越性能与极低正电压降的肖特基势垒整流器相结合。此器件特别适合用作 DC-DC 转换器的单封装方案。它具有快速开关、低门极电荷 MOSFET，且导通电阻极低。独立联接的肖特基二极管使其可用于各种 DC/DC 转换器拓扑结构。

  • This product is general usage and suitable for many different applications.

  • VGS = 10V，ID = 7A时，最大rDS(on) = 23 mΩ
  • VGS = 4.5V，ID = 0A时，最大rDS(on) = 30 mΩ
  • VF < 0.45V (2A)
  • VF < 0.28V (100mA)
  • 肖特基和MOSFET整合入单个功率表面贴装SO-8封装
  • 电气独立肖特基和MOSFET引脚输出提供设计的灵活性
  • 低米勒电荷

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDFS6N548

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Obsolete

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

with Schottky Diode

0

30

23

20

2.5

7

2

-

30

3

9

525

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDFS6N548

Equivalent to wafer fab process: RF,T8

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RF,T8

0

332986487

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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