P 沟道,PowerTrench® MOSFET,-20V,-2.6A,97mΩ

Obsolete

概览

此 P 沟道 MOSFET 使用先进的低压 PowerTrench® 工艺。此产品非常适用于电池功率管理应用。

  • This product is general usage and suitable for many different applications.

  • 最大rDS(on) = 95mΩ(VGS = -4.5V,ID = -2.6A
  • 最大rDS(on) = 115mΩ(VGS = -2.5V,ID = -2.2A
  • 最大rDS(on) = 160mΩ(VGS = -1.8V,ID = -1.9A
  • 最大rDS(on) = 330 mΩ(VGS = -1.5V,ID = -1.0A
  • 极低的栅极驱动要求允许在1.5V电路中运行
  • 非常小的封装尺寸SC70-6
  • 符合RoHS标准

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-2.6

0.75

NA

115

1.8

7.6

NA

-

-

-

-

Price N/A

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