Small Signal MOSFETs | FDG332PZ

P 沟道，PowerTrench® MOSFET，-20V，-2.6A，97mΩ

Obsolete

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概览

此 P 沟道 MOSFET 使用先进的低压 PowerTrench® 工艺。此产品非常适用于电池功率管理应用。

  • This product is general usage and suitable for many different applications.

  • 最大rDS(on) = 95mΩ（VGS = -4.5V，ID = -2.6A
    ）
  • 最大rDS(on) = 115mΩ（VGS = -2.5V，ID = -2.2A
    ）
  • 最大rDS(on) = 160mΩ（VGS = -1.8V，ID = -1.9A
    ）
  • 最大rDS(on) = 330 mΩ（VGS = -1.5V，ID = -1.0A
    ）
  • 极低的栅极驱动要求允许在1.5V电路中运行
  • 非常小的封装尺寸SC70-6
  • 符合RoHS标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG332PZ

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Obsolete

CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SC-88-6

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-2.6

0.75

NA

115

1.8

7.6

NA

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDG332PZ

Equivalent to wafer fab process: TV

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TV

0

1399545734

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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