Small Signal MOSFETs | FDG6318P

双 P 沟道，数字 FET，-20 V，-0.5 A，780 mΩ

Obsolete

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概览

此类双 P 沟道逻辑电平增强模式 MOSFET 是使用安森美半导体先进的 PowerTrench 工艺生产的，专用于最大程度降低导通电阻。此器件专用于在低压应用中替代双极数字晶体管和小信号 MOSFET。

  • This product is general usage and suitable for many different applications.

  • -0.5A，-20V
  • RDS(ON) = 780 mΩ @ VGS = -4.5V
  • RDS(ON) = 1200 mΩ @ VGS = -2.5V
  • 电平栅极驱动要求极低，从而可在3V电路中直接运行(VGS(th)< 1.5 V)
  • 紧凑的工业标准SC70-6表面贴装封装

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDG6318P

Contact Sales

Obsolete

相似产品推荐
CAD Model

Pb

A

H

P

SC-88-6 / SC-70-6 / SOT-363-6

419AD

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

NA

Small Signal

Logic

0

Dual

0

-20

-

12

-1.5

-0.5

0.3

NA

Q1=Q2=1200

-

0.86

NA

-

-

-

-

Price N/A

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