Small Signal MOSFETs | FDMA908PZ

单 P 沟道，PowerTrench® MOSFET，-12V，-12A，12.5mΩ

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概览

此器件专门针对手机和其他超便携应用中的电池充电或负载开关而设计。它具有一个带有低导通电阻的 MOSFET，且可针对 ESD 提供齐纳二极管保护。MicroFET 2x2 封装对于其物理尺寸来说提供了卓越的热性能，非常适合线性模式应用。

  • This product is general usage and suitable for many different applications.

  • 最大值 rDS(on) = 12.5 mΩ（需 VGS = -4.5 V 且 ID = -12 A
    ）
  • 最大值 rDS(on) = 18 mΩ（需 VGS = -2.5 V 且ID = -10 A
    ）
  • 最大值 rDS(on) = 28 mΩ（需 VGS = -1.8 V 且ID = -8 A
    ）
  • 薄型 – 最大 0.8mm，采用新型 MicroFET 2x2 mm 封装
  • HBM 静电放电保护等级 > 2.8 kV 典型值 （注 3）
  • 无卤素化合物和锑氧化物
  • 符合 RoHS 标准

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMA908PZ

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CAD Model

Pb

A

H

P

DFN-6

506DT

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

DFN-6

Small Signal

Logic

0

Single

0

-12

-

8

-1

-12

2.4

18

12.5

8.6

24

2638

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMA908PZ

Equivalent to wafer fab process: RN

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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