Small Signal MOSFETs | FDMD8540L

双 N 沟道 PowerTrench® MOSFET 40V，156A，1.5mΩ

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概览

此器件采用双 Power (5 mm X 6 mm) 封装，包括两个 40V N 沟道 MOSFET。针对半桥/全桥内部连接的 HS 源和 LS 漏极，低源电感封装，低 rDS(on)/Qg FOM 硅。

  • This product is general usage and suitable for many different applications.

  • Q1： N沟道
  • 最大值 rDS(on) = 2.2 mΩ（VGS = 4.5 V、ID = 26 A
    ）Q2: N沟道
  • 桥式拓扑初级端灵活布局的理想选择
  • 100% 经过 UIL 测试
  • 开尔文高侧 MOSFET 驱动引脚配置能力
  • 符合RoHS标准

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MSL Temp (°C)

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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FDMD8540L

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AT

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

PQFN-8

Small Signal

Logic

0

Dual

0

40

Q1=Q2=1.5

±20

3

Q1=Q2=156

62

-

Q1=Q2=2.2

-

38

Q1=Q2=5670

11

38

1668

75

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMD8540L

Equivalent to wafer fab process: RN

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RN

9

5181260142

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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