Small Signal MOSFETs | FDMD86100

双 N 沟道栅极屏蔽 PowerTrench® MOSFET

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概览

该封装集成两个在共源配置中内部连接的 N 沟道器件，并采用栅极屏蔽技术。 如此极大地减少了封装的寄生效应，优化了到底部共源焊盘的传热路径。 以极小的尺寸 (5 x 6 mm) 实现较高的功率密度。

  • This product is general usage and suitable for many different applications.

  • Common source configuration to eliminate PCB routing
  • Large source pad on bottom of package for enhanced thermals
  • 屏蔽栅极 MOSFET 技术
  • 最大值 rDS(on) = 10.5 mΩ（VGS = 10 V、ID = 10 A
    ）
  • 最大值 rDS(on) = 17.3 mΩ（VGS = 6 V、ID = 7.8 A
    ）
  • 满足二次侧同步整流灵活布局的需要
  • 终端无引线且符合 RoHS 标准
  • 100% 经过 UIL 测试

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMD86100

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CAD Model

Pb

A

H

P

PQFN-8

483AS

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

PQFN-8

Small Signal

Standard

0

Dual

0

80

Q1=Q2=10.5

±20

4

39

33

-

-

16

13

1469

4.1

46

321

12

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMD86100

Equivalent to wafer fab process: T7

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T7

11

3294609671

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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