Small Signal MOSFETs | FDMD8680

双 N 沟道，PowerTrench® MOSFET，60V，66A，4.7mΩ

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概览

此封装在共源配置中集成了两个内部连接的 N 沟道器件。因此实现了极低的封装寄生，以及通向底部共源片的优化热路径。提供了极小的占地面积 (5 x 6 mm)，实现了更高的功率密度。

  • This product is general usage and suitable for many different applications.

  • Common source configuration to Eliminate PCB Routing
  • Large Source Pad on Bottom of Package for Enhanced Thermals
  • Max rDS(on) = 4.7 mΩ at VGS = = 10 V, ID = 16 A
  • Max rDS(on) = 6.4 mΩ at VGS = = 8 V, ID = 14 A
  • Ideal for Flexible Layout in Secondary Side Synchronous Rectification
  • 100% UIL Tested
  • Termination is Lead-free and RoHS Compliant

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Case Outline

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MSL Temp (°C)

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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FDMD8680

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Last Shipments

CAD Model

Pb

A

H

P

PQFN-8

483AS

1

260

REEL

3000

N

N-Channel

PowerTrench® T6

PQFN-8

Small Signal

Standard

0

Dual

0

80

Q1=Q2=4.7

±20

4

66

39

-

-

-

53

3805

10

39

657

26

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMD8680

Equivalent to wafer fab process: T9

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T9

0

1733101746

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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