Small Signal MOSFETs | FDMS7600AS

30V 双N沟道PowerTrench® MOSFET

Obsolete

数据表

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概览

该器件在双MLP封装中包括有两个专门的N沟道MOSFET。在内部已连接了开关节点，以便于同步降压转换器的布局和路由。 控制MOSFET (Q1)和同步SyncFET™ (Q2)旨在提供优化的功效。

  • This product is general usage and suitable for many different applications.

  • Q1：N沟道
  • 最大值 RDS(on) = 7.5mΩ（VGS = 10V，ID = 12A
    ）
  • 最大值 RDS(on) = 12mΩ（VGS = 4.5V，ID = 10A
    ）Q2：N沟道

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDMS7600AS

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Obsolete

CAD Model

Pb

A

H

P

DFN-8

506DR

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

DFN-8

Small Signal

Logic

0

Dual

0

30

Q1: 7.5, Q2: 2.8

20

3

Q1: 30.0, Q2: 40.0

Q1: 2.2; Q2: 2.5

-

Q1: 12.0, Q2: 3.3

12

37

5265

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDMS7600AS

Equivalent to wafer fab process: RM,U4

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

RM,U4

0

453805928

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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