Small Signal MOSFETs | FDN340P

单 P 沟道，逻辑电平，PowerTrench® MOSFET，-20V，-2A，70mΩ

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概览

此 P 沟道逻辑电平 MOSFET 是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现卓越的开关性能。此类器件非常适用于便携式电子应用：负载开关和电源管理、电池充电电路和 DC/DC 转换。

  • This product is general usage and suitable for many different applications.
  • Load Switch
  • Power Management
  • Battery Charging Circuit
  • DC/DC converter

  • -2A，20V RDS(ON) = 70 mΩ @ VGS = -4.5 VRDS(ON) = 70 mΩ @ VGS = -4.5 V
  • 低栅极电荷（7.2nC典型值）
  • RDS(ON) = 70 mΩ @ VGS = -4.5 V
  • 高功率版本的工业标准SOT-23封装。 相同的SOT-23引脚，可将功率处理能力提高30%。
  • RDS(ON) = 110 mΩ @ VGS = -2.5 V
  • 高性能沟道技术可实现极低的RDS(ON)。

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Case Outline

MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

Channel Polarity

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

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FDN340P

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CAD Model

Pb

A

H

P

SOT-23-3

527AG

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-2

0.5

110

70

1.4

7.2

779

-

-

-

-

$0.1041

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可靠性数据

Die Related Summary Data

Device: FDN340P

Equivalent to wafer fab process: TT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TT

6

2104831460

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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