N 沟道 PowerTrench® MOSFET 60V,313A,2mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的,适用于最大程度降低导通电阻,同时保持出色的开关性能。

  • AC-DC商用电源
  • AC-DC商用电源-服务器和工作站
  • AC-DC商用电源-台式计算机
  • 其他数据处理
  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives
  • Uninterruptible Power Supplies
  • Renewable System

  • RDS(on) = 1.65mΩ (典型值)@ VGS = 10V, ID = 100A
  • 低FOM RDS(on) *QG
  • 低反向恢复电荷,Qrr = 194nC
  • 反向恢复软体二极管
  • 使能高效同步整流
  • 快速开关速度
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDP020N06B-F102

Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T6

TO-220

Small Signal

Standard

0

Single

0

60

2

±20

4.5

313

333

-

-

-

206

16100

34

194

3840

127

$2.553

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