Small Signal MOSFETs | FDP027N08B

N 沟道，PowerTrench® MOSFET，80V，223A，2.7mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，该工艺适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • AC-DC商用电源
  • AC-DC商用电源-服务器和工作站
  • AC-DC商用电源-台式计算机
  • 电动自行车
  • 工业级电机
  • 其他数据处理
  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives
  • Uninterruptible Power Supplies

  • RDS(on) = 2.21mΩ （典型值）@ VGS = 10V, ID = 100A
  • 低FOM RDS(on) *QG
  • 低反向恢复电荷，Qrr = 112nC
  • 反向恢复软体二极管
  • 使能高效同步整流
  • 快速开关速度
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDP027N08B-F102

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CAD Model

Pb

A

H

P

TO-220-3

221A

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T6

TO-220

Small Signal

Standard

0

Single

0

80

2.7

±20

4.5

223

246

-

-

-

137

10170

28

112

1670

35

$1.3465

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可靠性数据

Die Related Summary Data

Device: FDP027N08B-F102

Equivalent to wafer fab process: HVFET

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

HVFET

21

40576236131

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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