N 沟道,屏蔽门极,PowerTrench® MOSFET,100 V,222A,2.3mΩ

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概览

此 N 沟道 MV MOSFET 是使用安森美半导体先进的 PowerTrench® 工艺生产的,该工艺结合了屏蔽门极技术。此工艺经过了优化,可最大程度降低导通电阻,同时可保持卓越的开关性能,以及业内最佳的软体二极管。

  • Synchronous Rectification for ATX / Server / Workstation / Telecom PSU / Adapter and Industrial Power Supplies.
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter

  • Server
  • Telecom
  • Computing ( ATX, Workstation, Adapter, Industrial Power Supplies etc. )
  • Motor Drive
  • Uninterruptible Power Supplies

  • Max RDS(on) = 2.3 mΩ at VGS = 10 V, ID = 222 A
  • High Performance Trench Technology for Extremely Low RDS(on)
  • Extremely Low Reverse Recovery Charge, Qrr
  • Low Gate Charge, QG = 108nC ( Typ.)
  • High Power and Current Handling Capability
  • 100% UIL Tested
  • RoHS Compliant

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDP2D3N10C

Active

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

100

2.3

4

4

222

214

-

-

-

108

7980

22

191

4490

40

$3.443

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