功率 MOSFET,N 沟道,UniFETTM,200 V,39 A,66 mΩ,TO-220

Last Shipments

概览

UniFETTM MOSFET 是基于平面条纹和 DMOS 工艺的高压 MOSFET 系列。此 MOSFET 适用于降低导通电阻,提供更佳的开关性能以及更高的雪崩能量强度。此器件系列适用于开关电力转换器应用,如功率因数校正 (PFC)、平板显示屏 (FPD) TV 电源、ATX 和电子灯镇流器。

  • PDP TV
  • Lighting
  • Uninterruptible Power Supplies
  • AC-DC Power Supplies

  • RDS(on) = 66 mΩ(最大值),需 VGS = 10 V、ID = 19.5 A
  • 低栅极电荷(典型值 38 nC)
  • 低Crss(典型值 57 pF)
  • 100% 经过雪崩击穿测试

Tools and Resources

Product services, tools and other useful resources related to FDP39N20

产品列表

如需购买产品或样品,请先登录您的安森美账号。

搜寻

Close Search

产品:

1

分享

产品系列:

可订购器件:

1

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

200

66

5

5

39

251

-

-

-

38

1640

16.5

1100

400

57

Price N/A

More Details

Show More

1-25 of 25

Products per page

Jump to :

contact sales icon

Support on the go

Find and compare products, get support and connect with onsemi sales team.