Small Signal MOSFETs | FDP8441

N 沟道 Power Trench® MOSFET 40V，80A，2.7mΩ

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N 沟道，PowerTrench® MOSFET 40V，80 A，2.7 mΩ

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  • RDS(on) = 2.1 mΩ （典型值） @ VGS = 10V, ID = 80A
  • QG(tot) = 215nC（典型值） @ VGS = 10V
  • 低米勒电荷
  • 低 Qrr体二极管
  • UIS 能力（单脉冲和重复脉冲）
  • 符合 AEC Q101 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDP8441

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

40

2.7

±20

4

80

300

-

-

-

215

15000

49

76

1250

685

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDP8441

Equivalent to wafer fab process: T5

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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