Small Signal MOSFETs | FDP8860

N 沟道，PowerTrench® MOSFET，30V，80A，2.5mΩ

Obsolete

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概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效而设计，可以使用同步开关 PWM 控制器，也可以使用传统开关 PWM 控制器。它经过了优化，可实现低门极电荷、低 RDS(ON) 和快速开关。

  • This product is general usage and suitable for many different applications.
  • DC-DC Conversion
  • Start / Alternator Systems

  • 最大值 RDS(on) = 2.5mΩ（VGS = 10V, ID = 80A）
  • 最大值 RDS(on) = 2.9mΩ（VGS = 4.5V, ID = -80A）
  • 低米勒电荷
  • 低Qrr体二极管
  • UIL能力（单脉冲和重复脉冲）
  • 符合RoHS标准

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状态

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDP8860

Contact Sales

Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

N

N-Channel

PowerTrench® T1

TO-220

Small Signal

Logic

0

Single

0

30

2.5

20

2.5

80

254

-

2.9

-

81

9200

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDP8860

Equivalent to wafer fab process: T5

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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