N 沟道,PowerTrench® MOSFET,150V,15A,40mΩ

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概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的,该工艺适用于最大程度降低导通电阻,同时保持卓越的开关性能。

  • 消费型设备
  • LED 电视
  • 其他音频与视频
  • Synchronous Rectification
  • Uninterruptible Power Supplies
  • Micro Solar Inverters

  • RDS(on) = 31mΩ(典型值)@ VGS = 10V, ID = 15A
  • 快速开关速度
  • 低栅极电荷,QG = 14.3nC(典型值)
  • 高性能沟道技术可实现极低的 RDS(on)
  • 高功率和高电流处理能力
  • 符合 RoHS 标准

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDPF390N15A

Active

CAD Model

Pb

A

H

P

TO-220-3 FullPak

NA

0

TUBE

1000

Y

N-Channel

PowerTrench® T1

TO-220FP

Small Signal

Standard

0

Single

0

150

40

±20

4

15

22

-

-

-

14.3

965

3.5

131

96

5.8

$0.6308

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