N 沟道 UniFETTM MOSFET 250 V,51 A,60 mΩ

Obsolete

概览

UniFETTM MOSFET 是飞兆半导体公司的高压 MOSFET 系列产品,基于平面条形技术和 DMOS 技术开发。 该 MOSFET 产品专用于降低导通电阻,并提供更好的开关性能和更高的雪崩能量强度。 该器件系列适用于开关电源转换器应用,如功率因数校正(PFC)、平板显示器(FPD)电视电源、ATX 及灯用电子镇流器。

  • PDP TV
  • Lighting
  • Uninterruptible Power Supplies
  • AC-DC Power Supplies

  • RDS(on) = 48 mΩ(典型值) @ VGS = 10 V, ID = 25.5 A
  • 低栅极电荷(典型值 55 nC)
  • 低Crss(典型值 63 pF)

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDPF51N25RDTU

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

800

N

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

250

0.06

5

5

51

38

-

-

-

55

2620

27

4000

530

63

Price N/A

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