Small Signal MOSFETs | FDS4141

P 沟道，PowerTrench® MOSFET，-40V，-10.8A，13.0mΩ

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概览

此 P 沟道 MOSFET 是使用 PowerTrench® 专属技术生产的，可提供低 RDS(on) 和优化的 BVdss 能力，为应用带来卓越性能优势，还能提供优化的开关性能，降低转换器/反相器应用中的功率耗散损耗。

  • This product is general usage and suitable for many different applications.
  • Control Switch in Synchronous & Non-Synchronous Buck
  • Load Switch
  • Inverter

  • 最大 rDS(on) = 13.0 mΩ（VGS = -10 V、 ID = -10.5 A
    ）
  • 最大 rDS(on) = 19.0 mΩ（VGS = -4.5 V、ID = -8.4 A
    ）
  • 高性能沟道技术可实现极低的 rDS(on)
  • 符合 RoHS 标准

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS4141

Contact Sales

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-40

13

±20

-3

-10.8

5

-

19

16

19

2005

7

14

355

190

$0.2568

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可靠性数据

Die Related Summary Data

Device: FDS4141

Equivalent to wafer fab process: R2

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

R2

0

1067433832

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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