N 沟道,PowerTrench® MOSFET,40V,10.8A,12mΩ

Lifetime

概览

此 N 沟道 MOSFET 专为提高 DC/DC 转换器的总能效而设计,可以使用同步开关 PWM 控制器,也可以使用传统开关 PWM 控制器。它经过了优化,可实现低门极电荷、低 RDS(ON) 和快速开关。

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters

  • 10.8A,40V。 RDS(ON) = 12mΩ @ VGS = 10V
  • 低栅极电荷(29nC)
  • 高性能沟道技术可实现极低的RDS(on)
  • 高功率和高电流处理能力

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Lifetime

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

40

12

±20

5

10.8

2.5

-

-

-

29

1686

8

58

384

185

$0.4451

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