Small Signal MOSFETs | FDS4559_F085

60V 互补 PowerTrench® MOSFET

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概览

此互补 MOSFET 器件是使用先进的 PowerTrench 工艺生产的，特别适用于最大程度降低导通电阻，同时保持低门极电荷，实现出色的开关性能。

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  • Q1：N沟道
  • 4.5 A、60 V。
  • RDS(ON) = 105 mΩ @ VGS = -10 V
  • RDS(ON) = 135 mΩ @ VGS = -4.5 V

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS4559-F085

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±60

N: 55, P: 105

±20

±3

N: 4.5, P: -3.5

2

-

N: 75.0, P: 135

-

15

N: 650, P: 759

N: 2.6, P: 3.0

-

N: 80, P: 90

N: 35, P: 39

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS4559-F085

Equivalent to wafer fab process: TR

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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