Small Signal MOSFETs | FDS4897AC

双 N 和 P 沟道，PowerTrench® MOSFET，40V

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概览

此类双 N 和 P 沟道 MOSFET 是使用先进的 PowerTrench® 工艺生产的，特别适用于最大程度降低导通电阻，同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • Inverter
  • Power Supplies

  • Q1： N沟道
  • 最大值 RDS(on) = 26mΩ（VGS = 10V，ID = 6.1A）
  • 最大值 RDS(on) = 31mΩ（VGS = 4.5V，ID = 5.6A）Q2： P沟道
  • 最大值 RDS(on) = 39mΩ（VGS = -10V，ID = -5.2A）

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS4897AC

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

Complementary

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

±40

N:26.0,P:39.0

±20

±3

N: 6.1, P: -5.2

2

-

N:31.0,P:65.0

15

15

N: 796, P: 765

N: 2.9, P: 3.2

N: 7, P: 12

N: 95, P: 135

N: 65, P: 80

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS4897AC

Equivalent to wafer fab process: R2,RF

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

R2,RF

0

374463285

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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