N 沟道,PowerTrench® MOSFET,60V,7A,28mΩ

Obsolete

概览

此 N 沟道 MOSFET 是使用先进的 PowerTrench 工艺生产的,特别适用于最大程度降低导通电阻,同时保持卓越的开关性能。此类器件非常适用于要求线内低功率损耗和快速开关的低压和电池供电应用。

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Motor Drives

  • 7 A,60 V
  • 低栅极电荷(23nC,典型值)
  • 快速开关速度
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率和高电流处理能力

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可订购器件:

2

产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

80

28

±20

4

7

2.5

-

-

10

23

1107

6.8

-

149

72

Price N/A

More Details

FDS5690-NBBM009A

Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Standard

0

Single

0

80

28

±20

4

7

2.5

-

-

10

23

1107

6.8

-

149

72

Price N/A

More Details

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