Small Signal MOSFETs | FDS6685

P 沟道 PowerTrench® MOSFET -30V，-8.8A，20mΩ

Obsolete

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概览

此 P 沟道 MOSFET 是先进的 PowerTrench 工艺的坚固门极版本。它针对需要各种门极驱动电压额定值 (4.5V – 25V) 的电源管理应用进行了优化。

  • TBA
  • Load Switch
  • Battery Protection

  • –8.8 A, –30 V
    RDS(ON) = 20 mΩ @ VGS = –10 V
    RDS(ON) = 35 mΩ @ VGS = –4.5 V
  • Low gate charge (17nC typical)
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6685-NBCM003A

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Obsolete

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-30

20

±25

-3

-8.8

2.5

NA

-

17

-

NA

6

-

408

202

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS6685-NBCM003A

Equivalent to wafer fab process: TT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TT

6

2104831460

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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