Small Signal MOSFETs | FDS6699S

N 沟道 PowerTrench® SyncFET™，30V，21A，3.6mΩ

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概览

FDS6699S 专为替代同步 DC:DC 电源中的单 SO-8 MOSFET 和肖特基二极管而设计。此 30V MOSFET 用于最大程度提高电源转换效率，可提供低 RDS(ON) 和低门极电荷。FDS6699S 包括了一个使用单片 SyncFET 技术的集成式肖特基二极管。

  • This product is general usage and suitable for many different applications.
  • Synchronous Rectifier for DC/DC Converters
  • Notebook Vcore low side switch
  • Point of Load Low Side Switch
  • 21A、30V
  • RDS(ON) = 3.6 mΩ @ VGS = 10V
  • RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
  • 包含SyncFET肖特基体二极管
  • 高性能沟道技术可实现极低的RDS(ON)和快速开关
  • 高功率和高电流处理能力
  • 100%通过RG（栅极电阻）测试

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

参考价格

FDS6699S

联系销售

Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

No

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

30

3.6

20

3

21

2.5

-

4.5

23

35

3610

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS6699S

Equivalent to wafer fab process: T3

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T3

0

705279432

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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