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双笔记本电源,N 沟道,PowerTrench® SyncFET™,30V
Last Shipments
FDS6986AS 用于替代同步 DC:DC 电源中的两个单 SO-8 MOSFET 和肖基特二极管,可为笔记本电脑和其他电池供电电子设备提供各种外围电压。FDS6986AS 包含两个不同的 30V,N 沟道,逻辑电平,PowerTrench® MOSFET,用于最大程度提高电源转换能效。该高压侧开关 (Q1) 设计时特别强调了降低开关损耗,而低压侧开关(Q2) 也经过了优化可降低导电损耗。Q2 还包括了一个使用安森美半导体单片 SyncFET 技术的集成式肖基特二极管。
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CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
Last Shipments
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
N-Channel
PowerTrench® T1
SOIC-8
Small Signal
Logic
0
Dual
0
30
Q1: 29, Q2: 20
20
3
Q1: 6.5, Q2: 7.9
2
-
Q1: 38, Q2: 28
6
5.6
550
-
-
-
-
Price N/A
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可靠性数据
Die Related Summary Data
Device: FDS6986AS
Equivalent to wafer fab process: T3,TT
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
T3,TT
0
197591175
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)