Small Signal MOSFETs | FDS6986AS

双笔记本电源，N 沟道，PowerTrench® SyncFET™，30V

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FDS6986AS 用于替代同步 DC:DC 电源中的两个单 SO-8 MOSFET 和肖基特二极管，可为笔记本电脑和其他电池供电电子设备提供各种外围电压。FDS6986AS 包含两个不同的 30V，N 沟道，逻辑电平，PowerTrench® MOSFET，用于最大程度提高电源转换能效。该高压侧开关 (Q1) 设计时特别强调了降低开关损耗，而低压侧开关(Q2) 也经过了优化可降低导电损耗。Q2 还包括了一个使用安森美半导体单片 SyncFET 技术的集成式肖基特二极管。

  • This product is general usage and suitable for many different applications.

  • Q2： 进行优化以最大程度降低传导损耗
    包含SyncFET肖特基体二极管
    7.9A，30V RDS(on) = 20 mΩ @ VGS = 10V
    RDS(on) = 28 mΩ @ VGS = 4.5V
  • Q1： 经优化以获得低开关损耗
    低栅极电荷（10nC，典型值）
    6.5A，30V RDS(on) = 29 mΩ @ VGS = 10V
    RDS(on) = 38 mΩ @ VGS = 4.5V

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MSL Temp (°C)

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ON Target

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

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Crss Typ (pF)

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FDS6986AS

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Last Shipments

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

30

Q1: 29, Q2: 20

20

3

Q1: 6.5, Q2: 7.9

2

-

Q1: 38, Q2: 28

6

5.6

550

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS6986AS

Equivalent to wafer fab process: T3,TT

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T3,TT

0

197591175

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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