Small Signal MOSFETs | FDS6990AS

双 N 沟道，PowerTrench® SyncFET™，30V，7.5A，22mΩ

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概览

FDS6990AS 专为替代同步 DC:DC 电源中的双 SO-8 MOSFET 和两个肖基特二极管而设计。此 30V MOSFET 适用于最大程度提高电源转换能效，可提供低 RDS(ON) 和低门极电荷。每个 MOSFET 均包括使用单片 SyncFET 技术的集成式肖基特二极管。FDS6990AS 作为同步整流器中低压侧开关的性能与并联肖基特二极管的 FDS6990A 性能类似。

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Motor Drives

  • 7.5 A，30 V。 RDS(ON) = 22 mΩ @ VGS = 10V
    RDS(ON) = 28 mΩ @ VGS = 4.5V
  • 包含SyncFET肖特基体二极管
  • 低栅极电荷（10nC典型值）
  • 高性能沟道技术可实现极低的RDS(ON)
  • 高功率和高电流处理能力

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS6990AS

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

30

Q1=Q2=22

20

3

7.5

2

-

Q1=Q2=28

-

6

550

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS6990AS

Equivalent to wafer fab process: T3

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T3

0

442385824

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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