Small Signal MOSFETs | FDS8433A

单 P 沟道，2.5V 指定，MOSFET，-20V，-5A，47mΩ

Obsolete

数据表

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概览

此 P 沟道增强型场效应功率晶体管使用高单元密度的 DMOS 专属工艺生产。这种极高密度工艺特别适用于最大程度降低导通电阻，可提供卓越的开关性能。

  • This product is general usage and suitable for many different applications.

  • Load Switch
  • DC/DC Converters
  • Battery Protection

  • -5 A，-20 V
  • RDS(on) = 0.047 Ω @ VGS = -4.5 V
  • RDS(on) = 0.070 Ω @ VGS = -2.5 V
  • 快速开关速度
  • 高密度设计可实现极低的RDS(ON)
  • 高功率和高电流处理能力

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8433A

Contact Sales

Obsolete

CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

N

P-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

-20

-

8

-1

-5

2.5

NA

70

-

20

NA

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: FDS8433A

Equivalent to wafer fab process: TQ

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TQ

0

297078770

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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