Small Signal MOSFETs | FDS8840NZ

N 沟道，PowerTrench® MOSFET，40V，18.6A，4.5mΩ

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概览

FDS8840NZ 适用于最大程度降低电源转换应用中的损耗。同时结合了硅和封装技术的发展，可提供最低的 rDS(on)，同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • Synchronous Buck for Vcore and Server
  • Notebook Battery Pack
  • Load Switch

  • VGS = 10 V，ID = 18.6 A时，最大rDS(on) = 4.5 mΩ
  • VGS = 4.5 V，ID = 14.9 A时，最大rDS(on) = 6.0 mΩ
  • HBM静电放电保护等级 = 6 kV典型值 （注3）
  • 高性能沟道技术可实现极低的rDS(on)和快速开关
  • 高功率和高电流处理能力
  • 终端是符合RoHS标准的无铅产品

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDS8840NZ

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CAD Model

Pb

A

H

P

SOIC-8

751EB

1

260

REEL

2500

Y

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

40

4.5

±20

3

18.6

2.5

-

6

-

54

5665

19

21

650

445

$0.5415

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可靠性数据

Die Related Summary Data

Device: FDS8840NZ

Equivalent to wafer fab process: T5

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

T5

0

1599906359

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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