N 沟道,PowerTrench® MOSFET,30V,9A,20.0mΩ

Obsolete

概览

FDS8882 适用于最大程度降低电源转换应用中的损耗。同时结合了硅和封装技术的发展,可提供最低的 rDS(on),同时保持卓越的开关性能。

  • This product is general usage and suitable for many different applications.
  • Notebook System Regulators
  • DC/DC Converters

  • VGS = 10V,ID = 9 A时,最大rDS(on) = 20.0mΩ
  • VGS = 4.5 V,ID = 8 A时,最大rDS(on) = 22.5mΩ
  • 高性能沟道技术可实现极低的rDS(on)和快速开关
  • 高功率和高电流处理能力
  • 终端无引线且符合RoHS标准

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Obsolete

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Single

0

30

20

20

3

9

2.5

-

22.5

28

8

707

-

-

-

-

Price N/A

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