双 N 沟道,2.5V 指定,PowerTrench™ MOSFET,20V,6.5A,30mΩ

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概览

此类 N 沟道 2.5V 指定 MOSFET 使用先进的 PowerTrench 工艺。它针对较宽门极驱动电压额定值 (2.5V – 10V) 的电源管理应用进行了优化。

  • This product is general usage and suitable for many different applications.
  • Battery Protection
  • Load Switch
  • Power Management

  • 6.5 A, 20 V
  • RDS(ON) = 30 mΩ @ VGS = 4.5 V
  • RDS(ON) = 43 mΩ @ VGS = 2.5 V
  • 针对电池保护电路中的使用优化。
  • ±10 VGSS允许更宽的工作电压范围
  • 低栅极电荷

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SOIC-8

1

260

REEL

2500

N

N-Channel

PowerTrench® T1

SOIC-8

Small Signal

Logic

0

Dual

0

20

-

10

1.5

6.5

2

Q1=Q2=43

Q1=Q2=30

-

6.2

650

-

-

-

-

$0.2437

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