Small Signal MOSFETs | FDT459N

N 沟道增强型场效应晶体管，30V，6.5A，35mΩ

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概览

此类 N 沟道增强型功率场效应晶体管是使用高单元密度的 DMOS 专属工艺生产的。这种极高密度工艺特别适用于最大程度降低导通电阻，可提供卓越的开关性能。这些产品适用于笔记本电脑功率管理、电池供电电路和直流电机控制等低电压、低电流应用。

  • This product is general usage and suitable for many different applications.

  • 6.5 A，30 V。 RDS(ON) = 0.035 Ω @ VGS = 10 V
    RDS(ON) = 0.055 Ω @ VGS = 4.5 V
  • 高密度设计可实现极低的RDS(ON)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDT459N

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Obsolete

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SOT-223-4

Small Signal

Logic

0

Single

0

30

35

20

2

6.5

3

NA

-

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12

NA

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Price N/A

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可靠性数据

Die Related Summary Data

Device: FDT459N

Equivalent to wafer fab process: TQ

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TQ

0

297078770

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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