150V N沟道Power Trench® MOSFET

概览

这一N沟道MOSFET器件采用飞兆半导体的高级PowerTrench®工艺生产,该工艺专为实现rDS(on)、开关性能以及坚固性而优化。

  • 消费型设备
  • Load Switch
  • Primary Switch

  • VGS = 10 V且ID = 2.8A时,最大rDS(on) = 128 m
  • VGS = 6 V且ID = 2.4A时,最大rDS(on) = 178 m
  • 高性能沟道技术可实现极低的rDS(on)
  • 在广泛使用的表面贴装封装中可实现高功率和高电流处理能力
  • 快速开关速度
  • 100%经过UIL测试
  • 符合RoHS标准

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Active

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

1

260

REEL

4000

Y

N-Channel

PowerTrench® T1

SC-4

Small Signal

Standard

0

Single

0

150

128

±20

4

2.8

2.2

-

-

-

2.8

295

1.3

44

33

2.4

$0.2912

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