-20 V P-Channel PowerTrench® MOSFET

Obsolete

概览

此 P 沟道 MOSFET 器件采用 Fairchild 先进的 PowerTrench® 工艺生产,工艺经过优化,可实现最低通态电阻,同时仍保持卓越的开关性能。

  • Active Clamp Switch
  • Load Switch

  • 最大 rDS(on) = 108 mΩ(VGS = -4.5 V、ID = -1.15 A)
  • 最大 rDS(on) = 121 mΩ(VGS = -2.5 V、ID = -0.7 A)
  • 中压 P 沟道硅技术的 rDS(on)极低,非常适用于 Qg 较低的情况
  • 本品十分适用于需要快速开关和负载开关的场合
  • 100% 经过 UIL 测试
  • 符合 RoHS 标准

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FDV045P20L

CAD Model

Pb

A

H

P

SOT-23-3

1

260

REEL

3000

N

P-Channel

PowerTrench® T1

SOT-23-3

Small Signal

Logic

0

Single

0

-20

-

8

-1.5

-1.15

1.6

121

108

0.22

4.4

812

-

-

-

-

Price N/A

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