互补,N 和 P 沟道,PowerTrench® MOSFET,20V

Last Shipments

概览

此互补 N 和 P 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的,可优化 RDS(ON) at VGS=2.5V 和指定 RDS(ON) at VGS = 1.8V。

  • This product is general usage and suitable for many different applications.
  • Level Shifting
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

  • Q1: N沟道
  • 最大值 rDS(on) = 0.7m(VGS = 4.5V, ID = 600A)
  • ESD保护二极管
  • 符合RoHS标准

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产品

状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Last Shipments

CAD Model

Pb

A

H

P

SOT-563

1

260

REEL

3000

N

Complementary

PowerTrench® T1

SC-6

Small Signal

Logic

0

Dual

0

±20

-

8

±1.5

N: 0.6, P: -0.35

0.625

N: 850, P: 1600

N: 7000, P: 1200

-

1

100

-

-

-

-

Price N/A

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