功率 MOSFET,P 沟道,QFET®,-60 V,-11.4 A,175 mΩ,TO-220

Obsolete

概览

此类 P 沟道增强型电场效应晶体管是使用平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻,提供卓越的开关性能,可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于汽车、DC/DC 转换器,以及便携式和电池运行产品中用于电源管理的高效开关等低压应用。

  • DC/DC Converters
  • High Efficiency Switching
  • Power Management

  • -11.4 A、-60 V、RDS(on) = 175 mΩ(最大值)@ VGS = -10 V、ID = -5.7 A
  • 低栅极电荷(典型值 13 nC)
  • 低 Crss(典型值 45 pF)
  • 100% 经过雪崩击穿测试
  • 175℃ 最大结温额定值

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Obsolete

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

P-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

-60

185

-4

-4

-11.4

53

-

-

-

13

420

6.3

260

195

45

Price N/A

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