Small Signal MOSFETs | FQP11P06

功率 MOSFET，P 沟道，QFET®，-60 V，-11.4 A，175 mΩ，TO-220

Obsolete

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概览

此类 P 沟道增强型电场效应晶体管是使用平面条纹 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件非常适用于汽车、DC/DC 转换器，以及便携式和电池运行产品中用于电源管理的高效开关等低压应用。

  • DC/DC Converters
  • High Efficiency Switching
  • Power Management

  • -11.4 A、-60 V、RDS(on) = 175 mΩ（最大值）@ VGS = -10 V、ID = -5.7 A
  • 低栅极电荷（典型值 13 nC)
  • 低 Crss（典型值 45 pF)
  • 100% 经过雪崩击穿测试
  • 175℃ 最大结温额定值

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MSL Type

MSL Temp (°C)

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Container Qty.

ON Target

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Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQP11P06

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Obsolete

CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

1000

N

P-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

-60

185

-4

-4

-11.4

53

-

-

-

13

420

6.3

260

195

45

Price N/A

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可靠性数据

Die Related Summary Data

Device: FQP11P06

Equivalent to wafer fab process: 3D

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3D

10

304347029

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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