Power MOSFET, N-Channel, QFET®, 200 V, 6.6 A, 0.69 Ω, TO-220

Last Shipments

概览

These N-Channel enhancement mode power field effect transistors are produced using ON's proprietary, planar stripe, DMOS technology.This device is well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply and motor control

  • DC/DC Converters
  • Switched Mode Power Supplies
  • DC-AC Converters for Uninterrupted Power Supply
  • Motor Control

  • 6.6A, 200V, RDS(ON) = 0.69Ω @ VGS = 10 V
  • Low gate charge (typical 8.0nC)
  • Low Crss (typical 9.0pF)
  • Fast switching
  • 100% avalanche tested
  • Improved dv/dt capability

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CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

Last Shipments

CAD Model

Pb

A

H

P

TO-220-3

NA

0

TUBE

1000

N

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

200

690

30

5

6.6

63

-

-

-

8

300

3.3

510

60

9

Price N/A

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