Small Signal MOSFETs | FQPF9P25YDTU

P 沟道，QFET® MOSFET，-250 V，-6 A，620 mΩ

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概览

此 P 沟道增强型功率 MOSFET 使用安森美半导体的平面条纹和 DMOS 专属工艺生产。此先进 MOSFET 工艺适用于降低导通电阻，提供卓越的开关性能以及高雪崩能量强度。此类器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。

  • Switched Mode Power Supplies
  • Audio Amplifiers
  • DC Motor Control
  • Variable Switching Power Applications

  • -6 A, -250 V, RDS(on) = 620 mΩ（最大值）@ VGS = -10 V, ID = -3 A
  • 低栅极电荷（典型值 29 nC)
  • 低 Crss（典型值 27 pF）
  • 100% 经过雪崩击穿测试

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状态

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Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

FQPF9P25YDTU

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Obsolete

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CAD Model

Pb

A

H

P

TO-220-3

340BJ

NA

0

TUBE

800

N

P-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

Single

0

-250

620

-5

-5

-6

50

-

-

-

29

910

14

1450

170

27

Price N/A

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可靠性数据

Die Related Summary Data

Device: FQPF9P25YDTU

Equivalent to wafer fab process: 3D

产品技术

产品技术

等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

3D

10

304347029

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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