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此类 N 沟道 MOSFET 增强型电场效应晶体管是使用安森美半导体的平面 DMOS 专属技术生产的。此先进技术特别适用于最大程度降低导通电阻,提供出色的开关性能,可承受雪崩和换相模式下的高能量脉冲。 此类器件非常适用于高效开关 DC/DC 转换器、开关模式电源,以及用于不间断电源和电机控制的 DC-AC 转换器。
如需购买产品或样品,请先登录您的安森美账号。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
IRL640A
Pb
A
H
P
TO-220-3
NA
0
TUBE
1000
N
N-Channel
PowerTrench® T1
TO-220
Small Signal
Logic
0
Single
0
200
-
±20
2
18
110
-
180
-
40
1310
18.6
1550
200
95
Price N/A
More Details
IRL640APWD
Pb
A
H
P
E-PKG AXIAL-LEADED GLASS DIODE
NA
-
UNKNOWN
1
N
N-Channel
PowerTrench® T1
NA
Small Signal
Logic
0
Single
0
200
-
±20
2
18
110
-
180
-
40
1310
18.6
1550
200
95
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: IRL640A
Equivalent to wafer fab process: AC
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
AC
0
84016418
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)