Small Signal MOSFETs | IRLM120A

N 沟道 A-FET 200 V、1.13 A、800 mΩ

Obsolete

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概览

  • 雪崩耐用技术
  • 坚固的门栅氧化层技术与较低的输入电容
  • 增加的栅极电荷
  • 增加安全工作区域范围
  • 更低的漏电流： 10 µA（最大值）@ VDS = 200 V
  • 更低的 RDS(ON)： 0.609 Ω（典型值）

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

IRLM120ATF

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Obsolete

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

250

REEL

4000

N

N-Channel

PowerTrench® T1

SOT-223-4

Small Signal

Logic

0

Single

0

200

-

±20

20

1.13

2.7

NA

-

10.2

-

NA

6

340

90

39

Price N/A

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可靠性数据

Die Related Summary Data

Device: IRLM120ATF

Equivalent to wafer fab process: AC

产品技术

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

AC

0

84016418

More Details

Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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