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这些微型表面贴装 MOSFET 具有超低 RDS(on) 和真正逻辑电平性能。它们能够承受雪崩和换相模式下的高能量,漏极-源极二极管具有很短的逆向恢复时间。这些器件设计用于高能效至关重要的低电压、高速开关应用。典型应用为 DC-DC 转换器以及便携式和电池供电产品中的电源管理,如计算机、打印机、手机和无绳电话。它们还可用于大容量存储产品(例如磁盘驱动器和磁带驱动器)中的低压电机控制。雪崩能量专用于消除设计中的猜测,其中感应负载可进行切换,并提供额外的安全裕度,以抵御意外的电压瞬变。
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状态
CAD Models
Compliance
Package Type
Case Outline
MSL Type
MSL Temp (°C)
Container Type
Container Qty.
ON Target
Channel Polarity
Silicon Family
Package Name
Type
Gate Level
Wide SOA Mosfets
Configuration
OPN in older Technology
V(BR)DSS Min (V)
RDS(on) Max @ VGS = 10 V (mΩ)
VGS Max (V)
Vgs(th) Max (V)
Id Max (A)
PD Max (W)
RDS(on) Max @ VGS = 2.5 V (mΩ)
RDS(on) Max @ VGS = 4.5 V (mΩ)
Qg Typ @ VGS = 4.5 V (nC)
Qg Typ @ VGS = 10 V (nC)
Ciss Typ (pF)
Qgd Typ @ VGS = 4.5 V (nC)
Qrr Typ (nC)
Coss Typ (pF)
Crss Typ (pF)
Reference Price
MMSF3P02HDR2
Pb
A
H
P
SOIC-8
1
235
REEL
2500
N
P-Channel
PowerTrench® T1
NA
Small Signal
Logic
0
Single
0
20
75
20
2
5.6
2.5
NA
-
-
33
NA
-
0.133
740
260
Price N/A
More Details
MMSF3P02HDR2G
Pb
A
H
P
SOIC-8
1
260
REEL
2500
N
P-Channel
PowerTrench® T1
SOIC-8N
Small Signal
Logic
0
Single
0
20
75
20
2
5.6
2.5
NA
-
-
33
NA
-
0.133
740
260
Price N/A
More Details
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可靠性数据
Die Related Summary Data
Device: MMSF3P02HDR2G
Equivalent to wafer fab process: TMOS STD
产品技术
产品技术
等效器件小时
平均故障间隔时间/平均无故障时间(按小时计算)
FITS
TMOS STD
6
8818554393
More Details
Re-calculate Data
Data is based on the following assumptions.
Note: The temperature and confidence level may be adjusted to your requirements.
Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)