Small Signal MOSFETs | NDP6060

N 沟道增强型场效应晶体管 60V，48A，25mΩ

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概览

此类 N 沟道增强型电场效应晶体管是使用安森美半导体的高单元密度 DMOS 专属工艺生产的。此极高密度工艺特别适用于最大程度降低导通电阻，提供卓越的开关性能，可承受雪崩和换相模式下的高能量脉冲。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如汽车、DC/DC 转换器、PWM 电机控制和其他电池供电电路。

  • This product is general usage and suitable for many different applications.

  • 48A，60V。 RDS(ON) = 0.025Ω@ VGS=10V。
  • 在高温下额定的临界DC电气参数。
  • 耐用的内部源极-漏极二极管使得无需使用外部齐纳二极管瞬态抑制器。
  • 175°C最大结温额定值。
  • 采用高密度单元设计，可实现极低的RDS(ON)。
  • TO-220和TO-263 (D2PAK)封装，适用于通孔和表面贴装应用。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDP6060

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CAD Model

Pb

A

H

P

TO-220-3

340AT

NA

0

TUBE

800

Y

N-Channel

PowerTrench® T1

TO-220

Small Signal

Standard

0

NA

0

60

25

±20

4

48

100

-

-

-

39

1190

22

-

475

150

$1.3705

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可靠性数据

Die Related Summary Data

Device: NDP6060

Equivalent to wafer fab process: TO

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TO

0

955961600

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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