Small Signal MOSFETs | NDT2955

P 沟道增强型场效应晶体管，-60V，-2.5A，300mΩ

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概览

此 60V P 沟道 MOSFET 是使用 Fairchild Semiconductor 的高压沟槽工艺生产的。此产品非常适用于电源管理应用。

  • This product is general usage and suitable for many different applications.
  • DC/DC Converters
  • Power Management

  • -2.5A，-60V
  • RDS(ON) = 300mΩ @ VGS = -10V
  • RDS(ON) = 500mΩ @ VGS = -4.5V
  • 高密度单元设计可实现极低的RDS(ON)
  • 高功率和高电流处理能力，采用广泛使用的表面贴装封装。

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDT2955

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CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

P-Channel

PowerTrench® T1

SC-4

Small Signal

Logic

0

NA

0

-60

300

±20

-4

-2.5

1

-

500

-

11

601

2.7

40

85

35

$0.2332

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可靠性数据

Die Related Summary Data

Device: NDT2955

Equivalent to wafer fab process: TR

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TR

1

1603286882

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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