Small Signal MOSFETs | NDT454P

P 沟道增强型场效应晶体管 -30V，-5.9A，50mΩ

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概览

功率 SOT P 沟道增强型电场效应晶体管使用安森美半导体的高单元密度 DMOS 专属工艺生产。这种极高密度工艺特别适用于最大程度降低导通电阻，可提供卓越的开关性能。此类器件尤其适用于需要快速开关、线内低功率损耗和瞬变防止的低压应用，如笔记本电脑功率管理和其他电池供电电路。

  • This product is general usage and suitable for many different applications.

  • -5.9A，-30V。 RDS(ON) = 0.05 Ω @ VGS = -10V, RDS(ON) = 0.07 Ω @ VGS = -6V, RDS(ON) = 0.09 Ω @ VGS = -4.5V。
  • 高密度单元设计，可实现极低的RDS(ON)。
  • 采用广泛使用的表面贴装封装，具有高功率和高电流处理能力。

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Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NDT454P

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Obsolete

CAD Model

Pb

A

H

P

SOT-223-4 / TO-261-4

318H-01

1

260

REEL

4000

N

P-Channel

PowerTrench® T1

SOT-223-4

Small Signal

Logic

0

NA

0

-30

50

20

-3

-5.9

3

NA

-

-

29

NA

-

-

-

-

Price N/A

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可靠性数据

Die Related Summary Data

Device: NDT454P

Equivalent to wafer fab process: TP

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TP

8

738717284

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Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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