Small Signal MOSFETs | NTGS3130N

单 N 沟道，功率 MOSFET，20V，5.6A，24mΩ

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概览

功率 MOSFET，20V，5.6A，单 N 沟道，TSOP-6

  • DC-DC Converters
  • Lithium Ion Battery Applications
  • Load/Power Switching

  • Leading Edge Trench Technology for Low On Resistance
  • Low Gate Charge for Fast Switching
  • Small Size (3 x 2.75 mm) TSOP-6 Package

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状态

CAD Models

Compliance

Package Type

Case Outline

MSL Type

MSL Temp (°C)

Container Type

Container Qty.

ON Target

Channel Polarity

Silicon Family

Package Name

Type

Gate Level

Wide SOA Mosfets

Configuration

OPN in older Technology

V(BR)DSS Min (V)

RDS(on) Max @ VGS = 10 V (mΩ)

VGS Max (V)

Vgs(th) Max (V)

Id Max (A)

PD Max (W)

RDS(on) Max @ VGS = 2.5 V (mΩ)

RDS(on) Max @ VGS = 4.5 V (mΩ)

Qg Typ @ VGS = 4.5 V (nC)

Qg Typ @ VGS = 10 V (nC)

Ciss Typ (pF)

Qgd Typ @ VGS = 4.5 V (nC)

Qrr Typ (nC)

Coss Typ (pF)

Crss Typ (pF)

Reference Price

NTGS3130NT1G

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CAD Model

Pb

A

H

P

TSOP-6

318G-02

1

260

REEL

3000

N

N-Channel

PowerTrench® T1

TSOP-6

Small Signal

Logic

0

NA

0

20

-

8

1.4

5.6

1.1

32

24

7

12

935

4.2

8.8

169198

104110

Price N/A

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可靠性数据

Die Related Summary Data

Device: NTGS3130NT1G

Equivalent to wafer fab process: TRENCH FET LEGACY

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等效器件小时

平均故障间隔时间/平均无故障时间（按小时计算）

FITS

TRENCH FET LEGACY

2

15086608915

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Re-calculate Data

Data is based on the following assumptions.

Note: The temperature and confidence level may be adjusted to your requirements.

Disclaimer: A reliability FIT rate calculated using this tool shall not be used for any functional safety purpose. In case a raw FIT rate needs to be estimated for a component which is targeted to be used in a safety critical application (i.e. compliant to ISO 26262 standard) it should be calculated according to generic safety standards (IEC62380, IEC61709, SN29500, FIDES, etc.)

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